Progress on Diamane and Diamanoid Thin Film Pressureless Synthesis
نویسندگان
چکیده
Nanometer-thick and crystalline sp3-bonded carbon sheets are promising new wide band-gap semiconducting materials for electronics, photonics, medical devices. Diamane was prepared from the exposure of bi-layer graphene to hydrogen radicals produced by hot-filament process at low pressure temperature. A sharp stretching mode observed in ultraviolet Raman spectra around 1344–1367 cm?1 while no sp2-bonded peak simultaneously detected. By replacing with few-layer graphene, diamanoid/graphene hybrids were formed partial conversion due prevalent Bernal stacking sequence. spectroscopy, electron diffraction, Density Functional Theory calculations show that generates twisted located interface between upper diamanoid domain non-converted graphenic underneath. Carbon-hydrogen bonding basal plane hydrogenated where is bonded a single over an area 150 ?m2, directly evidenced Fourier transform infrared microscopy actual full hydrogenation diamane supported first-principle calculations. Those results open door large-scale production diamane, diamanoids, hybrids.
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ژورنال
عنوان ژورنال: C
سال: 2021
ISSN: ['2311-5629']
DOI: https://doi.org/10.3390/c7010009